f e a t u r e s p l a s t i c p a c k a g e h a s u n d e r w r i t e r s l a b o r a t o r y f l a m m a b i l i t y c l a s s i f i c a t i o n 9 4 v - o u t i l i z i n g f l a m e r e t a r d a n t e p o x y m o l d i n g c o m p o u n d . for surface mounted applicat ions. ex ceeds environmental standards of m il-s-19500 / 228 low leakage current . m e c h a n i c a l d a t a c a s e : m o l d e d p l a s t i c , j e d e c d o - 2 1 4 a b t ermi nals : solder plated, s olderable per mil-st d-750, method 2026 pol arity : indicated by cat hode band mounting p osition : a ny w eight : 0.00585 ounce, 0.195 gr am ( v ) (v) (v) (v) ( o c) fm320 ss32 20 14 20 fm330 ss33 30 21 30 fm340 ss34 40 28 40 fm350 ss35 50 35 50 fm360 ss36 60 42 60 fm380 ss38 80 56 80 FM3100 s310 100 70 100 0.85 -55 to +125 -55 to +150 symbols marking code operating temperature v r r m *1 v rms *2 v r *3 v f *4 0 . 5 5 0.70 m a x i m u m r a t i n g s ( a t t a =25 o c unless otherwise noted) p a r a m e t e r conditions symbol min. max. unit forward rectified current see fig.1 i o 3.0 a forward surge current 8.3ms single half sine-wave superimposed on rate load (jedec methode) i f s m 8 0 a v r = v r r m t a = 2 5 o c 0.5 ma v r = v r r m t a = 1 2 5 o c 20 ma thermal resistance junction to ambient r q j a 5 5 o c / w diode junction capacitance f=1mhz and applied 4vdc reverse voltage c j 250 pf storage temperature t s t g - 5 5 +150 o c reverse current i r * 1 repetitive peak reverse voltage *2 rms voltage *3 continuous reverse voltage *4 maximum forward voltage c h i p s c h o t t k y b a r r i e r d i o d e s silicon epitaxial planer type typ . ss32-ss310 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. 0.276(7.0) 0.260(6.6) 0.012(0.3) typ. 0.189(4.8) 0.173(4.4) 0.244(6.2) 0.228(5.8) 0.087(2.2) 0.071(1.8) 0.040 (1.0) typ. 0.040(1.0) typ. dimensions in inches and (millimeters) smc 0.152(3.8) 0.144(3.6) 0.032(0.8) typ. r o hs wej electronic co.,ltd
0.1 1.0 .01 10 50 fig.1-typical for w ard current dera ting cur ve a v e r a g e f o r w a r d c u r r e n t , ( a ) fig.4-typical junction cap acit ance reverse vol t age,(v) ju n c t i o n c a p a c i t a n c e , ( p f ) i n s t a n t a n e o u s f o r w a r d c u r r e n t , ( a ) for w ard vol t age,(v) pulse width 300us 1% duty cycle 0.5 1.0 1.5 2.0 2.5 3.0 700 600 500 400 300 200 100 0 .01 .05 .1 .5 1 5 10 50 100 .1 .3 .5 .7 .9 1.1 1.3 1.5 3.0 .1 1.0 10 100 fig.5 - typical reverse characteristics r e v e r s e l e a k a g e c u r r e n t , ( m a ) 0 20 40 60 80 100 120 140 .01 tj=75 c f m 3 2 0 ~ f m 3 4 0 f m 3 5 0 ~ f m 3 1 0 0 f m 35 0~ f m 36 0 f m 38 0~ f m 31 00 f m 32 0~ f m 34 0 tj=25 c tj=25 c ambient tempera ture,( c) 0 0 20 40 60 80 100 120 140 160 180 200 fig.2-typical for w ard characteristics percent of ra ted peak reverse vol t age,(%) fig.3-maximum non-repetitive for w ard p e a k f o r w a a r d s u r g e c u r r e n t , ( a ) 0 40 20 60 100 80 number of cycles a t 60hz 1 10 5 50 100 tj=25 c 8.3ms single half sine w ave jedec method ss32-ss310 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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